Other articles related with "line tunnel field-effect transistor":
18504 Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
  Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
    Chin. Phys. B   2017 Vol.26 (1): 18504-018504 [Abstract] (609) [HTML 1 KB] [PDF 329 KB] (458)
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